figure 1 design data case: hermetically sealed glass case. do ? 35 outline. lead material: copper clad steel. lead finish: tin / lead thermal resistance: ( r o jec ): 250 c/w maximum thermal impedance: ( z o jx ): 70 c/w maximum polarity: cathode end is banded. mounting position: any. 57 6 lake street, lawrence, massachusetts 01841 phone (978) 620-2600 fax (781) 689-0803 website: http://www.microsemi.com ? available in jan, jantx, and jantxv per mil-prf-19500/118 ? general purpose silicon diodes ? metallurgically bonded 1n5194 1n5195 1N5196 electrical characteristics @ 25c, unless otherwise specified maximum ratings operating temperature: -65c to +175c storage temperature: -65c to +175c operating current: 200 ma derating: 1.2 ma/c from 25c to 150c 1.0 ma/c from 150c to 175c forward current: 650 ma type v rm v rwm i o i o i fsm t a = 150c t p = 1/120 s t a = 25c v (pk) v (pk) ma ma a 1n5194 80 70 200 50 2 1n5195 180 180 200 50 2 1N5196 250 225 200 50 2 type v f i r1 at v rwm i r2 at v rm i r3 at v rwm @100ma t a = 25c t a = 25c t a = 150c v dc na dc a a dc 1n5194 0.8 - 1.0 25 100 5 1n5195 0.8 - 1.0 25 100 5 1N5196 0.8 - 1.0 25 100 5
58 in5194 thru in5196 .3 .4 .5 .6 .7 .8 .9 1.0 1.1 1.2 1.3 vf - forward voltage (v) figure 2 typical forward current vs forward voltage i f - forward current - (ma) 1000 100 10 1 0.1 150oc 100oc 25oc -65oc 20 40 60 80 100 120 140 percent of reverse working voltage (%) figure 3 typical reverse current vs reverse voltage i r - reverse current - ( a) 1000 100 10 1 0.1 .01 .001 150oc 100oc 25oc -65oc note : all temperatures shown on graphs are junction temperatures
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